English
Language : 

DG648BH45_15 Datasheet, PDF (7/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor
◁
4000
3000
Conditions:
Tj = 25°C, IFGM = 30A,
CS = 2.0µF,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
DG648BH45
VD = 3000V
2000
VD = 2000V
1000
0
0
VD = 1000V
500
1000
1500
2000
2500
On-state current IT - (A)
Fig.8 Turn-on energy vs on-state current
5000
4000
Conditions:
Tj = 25°C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
3000
3000
VD = 3000V
2000
VD = 2000V
1000
VD = 1000V
0
0
20
40
60
80
Peak forward gate current IFGM - (A)
Fig.9 Turn-on energy vs peak forward gate current
7/19
 ▷