DG648BH45_15 Datasheet, PDF (3/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

CHARACTERISTICS
T_j = 125^oC unless stated otherwise
Symbol
Parameter
V_TM
On-state voltage
I_DM
Peak off-state current
I_RRM
Peak reverse current
V_GT
Gate trigger voltage
I_GT
Gate trigger current
I_RGM
Reverse gate cathode current
E_ON
Turn-on energy
t_d
t_r
E_OFF
t_gs
t_gf
t_gq
Q_GQ
Q_GQT
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
I_GQM
Peak reverse gate current
DG648BH45
Conditions
At 2000A peak, I_G(ON) = 7A d.c.
V_DRM = 4500V, V_RG = 0V
At V_RRM
V_D = 24V, I_T = 100A, T_j = 25^oC
V_D = 24V, I_T = 100A, T_j = 25^oC
V_RGM = 16V, No gate/cathode resistor
V_D = 3000V
I_T = 2000A, dI_T/dt = 300A/µs
I_FG = 30A, rise time < 1.0µs
I_T = 2000A, V_DM = V_DRM
Snubber Cap Cs = 2.0µF,
di_GQ/dt = 40A/µs
Min. Max. Units
-
3.2
V
-
100 mA
-
50
mA
-
1.0
V
-
3.0
A
-
50
mA
- 3170 mJ
-
1.35 µs
-
3.2
µs
- 10000 mJ
-
20.0 µs
-
2.0
µs
-
22.0 µs
-
6000 µC
- 12000 µC
-
690
A
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