DG648BH45_15 Datasheet, PDF (10/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
5000
4000
Conditions:
T_j = 25°C,
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
3000
2000
V_DRM
0.75x V_DRM
0.5x V_DRM
1000
0
0
500
1000
1500
2000
2500
On-state current I_T - (A)
Fig.15 Turn-off energy vs on-state current
6000
5000
Conditions:
T_j = 25°C,
C_S = 2.0µF,
I_T = 2000A
V_DRM
3000
4000
0.75x V_DRM
3000
0.5x V_DRM
10/19
2000
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current