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| DG648BH45_15 Datasheet, PDF (1/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG648BH45
DG648BH45
Gate Turn-off Thyristor
DS4093-4 July 2014 (LN31736)
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
2000A
4500V
745A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: H.
See Package Details for further information.
Type Number
DG648BH45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
V
VRRM
V
4500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF 2000
IT(AV)
IT(RMS)
Mean on-state current
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
THS = 80oC. Double side cooled. Half sine 50Hz.
745
1170
Units
A
A
A
1/19
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