DG648BH45_15 Datasheet, PDF (13/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

30
Conditions:
C_S = 2.0µF,
I_T = 2000A
25
DG648BH45
20
T_j = 125°C
15
T_j = 25°C
10
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
1.5
T_j = 125°C
T_j = 25°C
1.0
0.5
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Fig.22 Gate fall time vs on-state current
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