DG648BH45_15 Datasheet, PDF (4/18 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
CURVES
2.0
8.0
1.5
6.0
1.0
4.0
V_GT
0.5
2.0
I_GT
0
0
-50 -25 0 25 50 75 100 125 150
Junction temperature T_j - (°C)
Fig.1 Maximum gate trigger voltage/current vs junction temperature
4000
Measured under pulse conditions.
I_G(ON) = 7A
Half sine wave 10ms
3000
T_j = 25°C
T_j = 125°C
2000
1000
0
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage V_TM - (V)
Fig.2 On-state characteristics
4/19