GP1600FSM12 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Single Switch IGBT Module Advance Information

GP1600FSM12
600
Conditions:
T_case = 25˚C,
V_CE = 600V,
500 _{VGE = 15V}
400
300
600
Conditions:
T_case = 125˚C,
V_CE = 600V,
500 V_GE = 15V
A
A
400
B
B
C
C
300
200
200
100
0
0
A : R_g = 3.3Ω
B : R_g = 4.7Ω
C : R_g = 7Ω
200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig.9 Typical turn-off energy vs collector current
100
0
0
A : R_g = 7Ω
B : R_g = 4.7Ω
C : R_g = 3.3Ω
200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig.10 Typical turn-off energy vs collector current
120
Conditions:
V_CE = 600V,
V_GE = 15V,
100 R_g = 3.3Ω
80
60
40
T_case = 125˚C
T_case = 25˚C
2500
2000
1500
t_d(off)
t_d(on)
1000
Conditions:
T_case = 125˚C,
V_CE = 600V
V_GE = 15V
R_g = 3.3Ω
20
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
500
0
0
t_f
t_r
200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig.11 Typical diode turn-off energy vs collector current
Fig.12 Typical switching times
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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