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| GP1600FSM12 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Single Switch IGBT Module Advance Information | |||
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GP1600FSM12
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
ICES
Collector cut-off current
I
GES
VGE(TH)
Gate leakage current
Gate threshold voltage
VCE(SAT) Collector-emitter saturation voltage
IF
Diode forward current
IFM Diode maximum forward current
V
Diode forward voltage
F
C
Input capacitance
ies
LM
Module inductance
Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
-
VGE = 0V, VCE = VCES, Tcase = 125ËC -
V
GE
=
±20V,
V
CE
=
0V
-
IC = 120mA, VGE = VCE
4.5
VGE = 15V, IC =1600A
-
VGE = 15V, IC = 1600A, Tcase = 125ËC
-
DC
-
-
2 mA
-
75 mA
-
8 µA
-
6.5 V
2.7 3.5 V
3.2 4.0 V
- 1600 A
tp = 1ms
-
- 3200 A
I =1600A
F
- 2.2 2.4 V
I =1600A, T = 125ËC
F
case
- 2.3 2.5 V
V = 25V, V = 0V, f = 1MHz - 180 -
CE
GE
nF
-
-
15
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
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