GP1600FSM12 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Single Switch IGBT Module Advance Information

GP1600FSM12
INDUCTIVE SWITCHING CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
t_d(off)
Turn-off delay time
t_f
Fall time
E_OFF Turn-off energy loss
t_d(on)
Turn-on delay time
t_r
Rise time
E_ON Turn-on energy loss
Q_rr
Diode reverse recovery charge
Q_rr
Diode reverse recovery charge
T_case = 125˚C unless stated otherwise.
t_d(off)
Turn-off delay time
t_f
Fall time
E_OFF Turn-off energy loss
t
Turn-on delay time
d(on)
t
Rise time
r
E
Turn-on energy loss
ON
Q
Diode reverse recovery charge
rr
Q_rr
Diode reverse recovery charge
Conditions
I_C = 1600A
V_GE = ±15V
V_CE = 600
R_G(ON) = R_G(OFF) = 3.3Ω
L ~ 100nH
I = 1600A
F
V_R = 50%V_CES,
dI_F/dt = 2000A/µs
Min. Typ. Max. Units
- 1650 1800 ns
- 200 250 ns
- 350 450 mJ
- 1600 1750 ns
- 450 550 ns
- 160 200 mJ
-
100 130 µC
-
170
-
µC
I_C = 1600A
V_GE = ±15V
V_CE = 600
R
G(ON)
=
R
G(OFF)
=
3.3Ω
L ~ 100nH
I_F = 1600A
V_R = 50%V_CES,
dI_F/dt = 2000A/µs
- 1900 2100 ns
- 250 300 ns
- 400 500 mJ
- 1750 2000 ns
- 500 550 ns
- 250 350 mJ
- 250 350 µC
-
225
-
µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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