GP1600FSM12 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Single Switch IGBT Module Advance Information

GP1600FSM12
GP1600FSM12
Single Switch IGBT Module
Advance Information
DS5451-1.2 October 2001
FEATURES
s High Thermal Cycling Capability
s 1600A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
1200V
(typ) 2.7V
(max) 1600A
(max) 3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP1600FSM12 is a singlel switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux C
External connection
C1
C2
G
Aux E
E1
E2
External connection
Fig.1 Single switch circuit diagram
Aux C
E1
C1
Aux E
ORDERING INFORMATION
Order As:
GP1600FSM12
Note: When ordering, please use the complete part number.
G
E2
C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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