GP1600FSM12 Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Single Switch IGBT Module Advance Information

GP1600FSM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T = 25˚C unless stated otherwise
case
Symbol
Parameter
Test Conditions
Max.
Units
V_CES
V
GES
I
C
I
CM
P
max
V_isol
Collector-emitter voltage
V_GE = 0V
Gate-emitter voltage
-
Collector current
Maximum power dissipation
Isolation voltage
DC, T_case = 82˚C
1ms, T_case = 112˚C
T_case = 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
1200
V
±20
V
1600
A
3200
A
13.9
kW
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R_th(j-c)
R_th(j-c)
R
th(c-h)
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - Case to heatsink
(per module)
T_j
Junction temperature
T
Storage temperature range
stg
-
Screw torque
Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
9 ^oC/kW
-
-
20 ^oC/kW
-
8 ^oC/kW
-
150 ^oC
-
125 ^oC
–40 125 ^oC
-
5 Nm
-
2 Nm
-
10 Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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