GP1200ESM33 Datasheet, PDF (6/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33
10000
100
I_C max. (single pulse)
t_p = 100µs
1000
10
100
I_{C max. DC}
t_{p = 1ms}
(continuous)
1
10
Diode
Transistor
Conditions:
T_vj = 125˚C, T_case = 80˚C
1
0.1
0.001
0.01
0.1
1
10
1
10
100
1000
10000
Collector-emitter voltage, V_ce - (V)
Pulse width, t_p - (ms)
Fig.7 Forward bias safe operating area
Fig.8 Transient thermal impedance
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig.9 DC current rating vs case temperature
400
380
360
340
320
300
280
260
240
220
200
0
T_vj = 25˚C, V_CE = 25V
V_GE = 0V, f = 1MHz
10
20
30
40
50
60
Collector-emitter voltage, V_CE - (V)
Fig.10 Typical input capacitance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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