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| GP1200ESM33 Datasheet, PDF (4/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information | |||
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GP1200ESM33
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
EON
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125ËC unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 1200A
V
GE
=
±15V
VCE = 1800V
RG(ON) = 1.8â¦, RG(OFF) = 3.3â¦
CGE = 660nF,
L ~ 90nH
I = 1200A, V = 1800V,
F
R
dIF/dt = 5500A/µs
Min. Typ. Max. Units
-
3.2
-
µs
-
0.9
-
µs
-
1.6
-
J
-
1.1
-
µs
-
0.4
-
µs
-
1.6
-
J
-
600
-
µC
-
1200
-
A
-
0.7
-
J
Test Conditions
IC = 1200A
VGE = ±15V
V = 1800V
CE
RG(ON) = 1.8â¦, RG(OFF) = 3.3â¦
CGE = 660nF,
L ~ 90nH
I = 1200A, V = 1800V,
F
R
dIF/dt = 4500A/µs
Min. Typ. Max. Units
-
3.4
-
µs
-
1.5
-
µs
-
2.4
-
J
-
1.1
-
µs
-
0.5
-
µs
-
2.3
-
J
-
1000
-
µC
-
1300
-
A
-
1.1
-
J
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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