GP1200ESM33 Datasheet, PDF (1/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33
Replaces July 2000 version, DS5308-1.6
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP1200ESM33
High Reliability Single Switch IGBT Module
Advance Information
DS5308-2.1 February 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
3300V
3.4V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
External connection
C1
C2
C3
Aux C
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1
E2
E3
External connection
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
GP1200ESM33
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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