GP1200ESM33 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise.
case
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V_GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I_FM
Diode maximum forward current
V_F
Diode forward voltage
C_ies
Input capacitance
L_M
Module inductance
Test Conditions
Min. Typ. Max. Units
V_GE = 0V, V_CE = V_CES
-
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
-
V_GE = ±20V, V_CE = 0V
-
I = 120mA, V = V
4.5
C
GE
CE
V_GE = 15V, I_C = 1200A
-
V_GE = 15V, I_C = 1200A, , T_case = 125˚C
-
DC
-
-
3
mA
-
100 mA
-
12 µA
5.5
6.5
V
3.4
4.3
V
4.3
5
V
-
1200 A
t = 1ms
p
I_F = 1200A
I_F = 1200A, T_case = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
-
-
-
2400 A
-
2.3
2.9
V
-
2.4
3
V
-
300
-
nF
-
10
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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