GP1200ESM33 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 _{Tcase = 25˚C}
2000
V_ge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
2400
Common emitter
2200 _{Tcase = 125˚C}
2000
V_ge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1.0
T_j = 25˚C
T_j = 125˚C
1.5
2.0
2.5
3.0
3.5
Foward voltage, V_F - (V)
Fig.5 Diode typical forward characteristics
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600 ^{Tcase = 125˚C}
V_ge = ±15V
400 _{Rg(OFF) = 3.3Ω}
200
C_GE = 660nF
dV_CE/dt < 9000V/µs
0
0
500 1000 1500
2000
2500
3000
Collector-emitter voltage, V_ce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com