GP1200ESM33 Datasheet, PDF (2/9 Pages) Dynex Semiconductor – High Reliability Single Switch IGBT Module Advance Information

GP1200ESM33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V
CES
V_GES
I_C
I_C(PK)
P
max
V_isol
Collector-emitter voltage
V = 0V
GE
Gate-emitter voltage
-
Continuous collector current
T = 80˚C
case
Peak collector current
1ms, T_case = 120˚C
Max. transistor power dissipation T_case = 25˚C, T_j = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
3300 V
±20 V
1200 A
2400 A
14.7 kW
6000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R_th(j-c)
Thermal resistance - transistor
Continuous dissipation -
junction to case
R_th(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
R_th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T_j
Junction temperature
Transistor
Diode
T_stg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
8.5 ˚C/kW
-
16.3 ˚C/kW
-
4 ˚C/kW
-
125 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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