DG858BW45_15 Datasheet, PDF (5/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
0.015
4000
3500
3000
Conditions:
T_j = 125°C,
V_DM = V_DRM
dI_GQ/dt = 40A/µs
2500
2000
1500
1000
0 1.0 2.0 3.0 4.0 5.0 6.0
Snubber capacitance C_s - (µF)
Figure 4. Maximum dependence of I_TCM on Cs
dc
0.010
0.005
0
0.001
0.01
0.1
1.0
Time - (s)
10
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
50
40
30
20
10
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Figure 6. Surge (non-repetitive) on-state current vs time
5/19