DG858BW45_15 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
3.0
2.5
2.0
1.5
Conditions:
I_T = 3000A
Cs = 3.0µF
T_j = 125°C
T_j = 25°C
1.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Figure 24. Gate fall time vs rate of rise of reverse gate current
1000
Conditions:
900
C_s = 3.0µF
dI_GQ/dt = 40A/µs
800
700
T_j = 125°C
T_j = 25°C
600
500
400
300
200
0
500
1000
1500
2000
2500
On-state current I_T - (A)
Figure 25. Peak reverse gate current vs on-state current
3000
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