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| DG858BW45_15 Datasheet, PDF (1/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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FEATURES
q Double Side Cooling
q High Reliability In Service
q High Voltage Capability
q Fault Protection Without Fuses
q High Surge Current Capability
q Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
q Variable speed A.C. motor drive inverters (VSD-AC)
q Uninterruptable Power Supplies
q High Voltage Converters
q Choppers
q Welding
q Induction Heating
q DC/DC Converters
VOLTAGE RATINGS
Type Number
DG858BW45
Repetitive Peak
Off-state Voltage
VDRM
V
4500
DG858BW45
DG858BW45
Gate Turn-off Thyristor
DS4096-5 July 2014 (LN31733)
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
3000A
4500V
1180A
1000V/µs
300A/µs
Package outline type code: W.
See Package Details for further information.
Figure 1. Package outline
Repetitive Peak Reverse
Voltage
VRRM
V
16
Conditions
Tvj = 125oC, IDM = 100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF 3000
IT(AV)
IT(RMS)
Mean on-state current
RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz
THS = 80oC. Double side cooled, half sine 50Hz
1180
1850
Units
A
A
A
1/19
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