DG858BW45_15 Datasheet, PDF (10/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
10/19
9000
Conditions:
8000
T_j = 25°C
Cs = 3.0µF
A
dI_GQ/dt = 40A/µs
7000
B
6000
C
5000
4000
3000
2000
1000
0
0
A: V_DM = 100% V_DRM
B: V_DM = 75% V_DRM
C: V_DM = 50% V_DRM
500
1000
1500
2000
2500
On-state current I_T - (A)
Figure 16. Turn-off energy loss vs on-state current
3000
9000
8500
8000
Conditions:
I_T = 3000A
T_j = 25°C
Cs = 3.0µF
V_DM = 100% V_DRM
7500
7000
V_DM = 75% V_DRM
6500
6000
5500
V_DM = 50% V_DRM
5000
4500
4000
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt- (A/µs)
Figure 17. Turn-off energy vs rate of rise of reverse gate current