DG858BW45_15 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
14000
Conditions:
A
12000
T_j = 125°C
Cs = 3.0µF
dI_GQ/dt = 40A/µs
B
10000
8000
C
6000
4000
2000
0
0
A: V_DM = 100% V_DRM
B: V_DM = 75% V_DRM
C: V_DM = 50% V_DRM
500
1000
1500
2000
2500
On-state current I_T - (A)
Figure 18. Turn-off energy vs on-state current
3000
14000
13000
V_DM = 100% V_DRM
12000
11000
10000
9000
8000
7000
V_DM = 75% V_DRM
Conditions:
I_T = 3000A
T_j = 125°C
Cs = 3.0µF
V_DM = 50% V_DRM
6000
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt- (A/µs)
Figure 19. Turn-off energy loss vs rate of rise of reverse gate current
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