DG858BW45_15 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (One in each electrode)
Auxiliary cathode connector Ø3.0
Gate connector Ø3.0
Ø120 max
Ø84.6 nom
Anode
Ø84.6 nom
72 max
Cathode
Nominal weight: 1700g
Clamping force: 40kN ±10%
Lead double coax, length: 630mm
Package outine type code: W
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19