MTC5806V8_16 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 8/13
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
20
1.4
-10V, -9V, -8V, -7V,-6V,-5V
1.2
15
VGS=-4V
1
10
0.8
Brekdown Voltage vs Ambient Temperature
5
VGS=-3V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=-3V
100
VGS=-4.5V
VGS=-10V
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-3.3A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8 ^{VGS=-4.5V, ID=-3A}
RDS(ON)@Tj=25°C : 93mΩ typ.
1.6
1.4
1.2
1
0.8
VGS=-10V, ID=-3.3A
0.6
RDS(ON)@Tj=25°C : 70mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTC5806V8
CYStek Product Specification