MTC5806V8_16 Datasheet, PDF (2/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
60
VGS
±20
-60
±20
V
Continuous Drain Current *2 ^{TA=25 C, VGS=10V (-10V)}
IDSM
4.3
-3.3
TA=70 C, VGS=10V (-10V)
3.4
-2.6
Continuous Drain Current
TC=25 C, VGS=10V (-10V)
ID
6.4
-4.6
A
TC=100 C, VGS=10V (-10V)
4.5
-3.3
Pulsed Drain Current * 3
IDM
20
-20
Total Power
Dissipation
TA=25°C, Single device operation
TA=70°C, Single device operation
TA=25°C, Single device value at dual operation
TA=70°C, Single device value at dual operation
PDSM
1.5 *2
0.96 *2
1.24 *2
W
0.79 *2
TC=25°C
TC=100°C
3.75
PD * 1
1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
60
VGS(th)
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
10
μA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, Tj=70C
*RDS(ON)
-
-
37
42
58
60
m
VGS=10V, ID=4.3A
VGS=4.5V, ID=4A
*GFS
-
9.5
-
S
VDS=5V, ID=4.3A
MTC5806V8
CYStek Product Specification