MTC5806V8_16 Datasheet, PDF (3/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*VSD
-
*trr
-
*Qrr
-
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 3/13
1173
-
45
-
pF VDS=25V, VGS=0V, f=1MHz
35
-
9.2
-
16.6
37.2
-
-
ns
VDS=30V, ID=1A, VGS=10V, RG=6Ω
15.6
-
18
-
3.0
-
nC VDS=30V, ID=4.3A, VGS=10V
2.6
-
0.74
1.2
V
VGS=0V, IS=1.3A
12
6
-
-
ns
nC
IS=1.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
-60
VGS(th)
-1.0
IGSS
-
-
IDSS
-
-
*RDS(ON)
-
-
-
-
-2.5
V
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-10
μA
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V, Tj=70C
70
90
VGS=-10V, ID=-3.3A
93
125
m _{VGS=-4.5V, ID=-3A}
*GFS
-
8.5
-
S
VDS=-5V, ID=-3.3A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*VSD
-
*trr
-
*Qrr
-
940
-
49
-
pF VDS=-25V, VGS=0V, f=1MHz
35
-
7.4
-
18.8
64.6
-
-
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
28.2
-
19.3
-
2.7
-
nC VDS=-30V, ID=-3.3A, VGS=-10V
3.0
-
-0.76
-1.2
V
VGS=0V, IS=-1.3A
10
5
-
-
ns
nC
IS=-1.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTC5806V8
CYStek Product Specification