MTC5806V8_16 Datasheet, PDF (10/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 10/13
Typical Characteristics(Cont.) : Q2(P-channel)
20
18
16
14
12
10
8
6
4
2
0
0
Typical Transfer Characteristics
VDS=-10V
1
2
3
4
-VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
θ JA=84°C/W
30
20
10
0
5
0.001
0.01
0.1
1
10
100
Pulse Width(s)
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=84°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
Maximum Drain Current vs Case Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
Tj(max)=175°C, VGS=-4.5V
RθJC=40°C/W
50 75 100 125 150
TC, Case Temperature(°C)
175 200
1.E+01
MTC5806V8
1.E+02
1.E+03
CYStek Product Specification