MTC5806V8_16 Datasheet, PDF (6/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 6/13
Typical Characteristics(Cont.) : Q1( N-channel)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
ID=250μA
1000
1
Coss
100
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
1
6
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
10 ^Limite
100μ s
1
1ms
10ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=84°C/W,Single Pulse
100m
s
1s
DC
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
4
VDS=30V
2
ID=4.3A
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V
RθJA=84°C/W
0.5
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTC5806V8
CYStek Product Specification