MTC5806V8_16 Datasheet, PDF (5/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
1.4
10V, 9V, 8V, 7V, 6V, 5V, 4V
1.2
15
1
10
VGS=3V
0.8
Brekdown Voltage vs Ambient Temperature
5
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1
VGS=2.5V
VGS=3V
0.8
100
VGS=4.5V
0.6
VGS=10V
0.4
Tj=25°C
Tj=150°C
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=4.3A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=4.5V, ID=4A
RDS(ON)@Tj=25°C : 42mΩ typ.
2
1.6
1.2
0.8
VGS=10V, ID=4.3A
RDS(ON)@Tj=25°C : 37mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTC5806V8
CYStek Product Specification