MTB5D0C03J4 Datasheet, PDF (7/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 7/13
Q2, P-CH Typical Characteristics
Typical Output Characteristics
50
Brekdown Voltage vs Ambient Temperature
1.4
40
30
20
10
0
0
-10V, -9V, -8V,-7V,-6V,-5V
-4V
-3.5V
VGS=-3V
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
VGS=-4.5V
VGS=-10V
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-10A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=-10V, ID=-10A
2
RDS(ON)@Tj=25°C : 13.4mΩ typ.
1.6
1.2
0.8
VGS=-4.5V, ID=-7A
RDS(ON)@Tj=25°C : 20.1mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB5D0C03J4
CYStek Product Specification