MTB5D0C03J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTB5D0C03J4
Features
 Low Gate Charge
 Simple Drive Requirement
 RoHS compliant & Halogen-free package
BVDSS
ID @ VGS=10V(-10V), TA=25°C
ID @ VGS=10V(-10V), TC=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
30V
8.6A
33.5A
6.7 mΩ
8.3 mΩ
P-CH
-30V
-6.8A
-26.5A
13.4 mΩ
20.1 mΩ
Equivalent Circuit
MTB5D0C03J4
Outline
TO-252-4L
Tab D1/D2
G：Gate D：Drain
S：Source
G2
S2
G1
S1
Absolute Maximum Ratings (TA=25C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS
±20
-30
±20
V
Continuous Drain Current @ TC=25C, VGS=10V(-10V) (Note1)
33.5 -26.5
Continuous Drain Current @ TC=100C, VGS=10V(-10V) (Note1)
Continuous Drain Current @ TA=25C, VGS=10V(-10V) (Note4)
ID
Continuous Drain Current @ TA=70C, VGS=10V(-10V) (Note4)
21.2 -16.8
8.6
6.9
-6.8
-5.4
A
Pulsed Drain Current *1
(Note3) IDM
134
-106
Single Pulse Avalanche Current @ L=0.1mH
IAS
33.5
-26.5
Single Pulse Avalanche Energy @L=1mH
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
(Note5)
EAS
128
128 mJ
(Note1)
25
PD
(Note1)
10
W
(Note2)
2.4
PDSM
(Note2)
1.7
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+150
C
MTB5D0C03J4
CYStek Product Specification