MTB5D0C03J4 Datasheet, PDF (6/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 6/13
Q1, N-CH Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
50
VDS=10V
40
40
30
30
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX)=150°C
TA=25°C
RθJA=90°C/W
20
20
10
10
0
0
0
1
2
3
4
5
0.001
VGS, Gate-Source Voltage(V)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.01
0.1
1
Pulse Width(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
10
100
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
Maximum Drain Current vs Case Temperature
40
35
30
25
20
15
10 _{Tj(max)=150°C,VGS=4.5V}
5
RθJC=6°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
1.E+01
1.E+02
1.E+03
MTB5D0C03J4
CYStek Product Specification