MTB5D0C03J4 Datasheet, PDF (5/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 5/13
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
1.4
Threshold Voltage vs Junction Tempearture
1000
1.2
Ciss
1
0.8
ID=1mA
Coss
Crss
100
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Gate Charge Characteristics
10
VDS=80V
8
VDS=50V
6
4
2
ID=8A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
100
RDS(ON)
Limited
10
1
0.1 _{TA=25°C, Tj=150°C, VGS=10V}
RθJA=90°C/W,Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
TA=25°C, Tj(max)=150°C,VGS=10V
1
RθJA=90°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTB5D0C03J4
CYStek Product Specification