MTB5D0C03J4 Datasheet, PDF (2/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 2/13
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
Rth,j-a
62.5
C/W
90
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
5. L=1mH, IAS=±16A, VGS=±10V, VDD=±15V. 100% tested by L=0.1mH, IAS=±10A, VGS=±10V, VDD=±15V.
N-CH Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
30
∆BVDSS/∆Tj
-
VGS(th)
1.0
IGSS
-
-
IDSS
-
RDS(ON) *1
-
-
GFS *1
-
Dynamic
Qg *1
-
Qgs *1
-
Qgd *1
-
td(ON) *1
-
tr *1
-
td(OFF) *1
-
tf *1
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
IS *1
-
ISM *2
-
VSD *1
-
trr *
-
Qrr *
-
Typ.
-
0.02
-
-
-
-
6.7
8.3
14.9
34.3
4.4
8.8
7
13.4
53
11.6
1385
216
143
-
-
0.82
13.9
6.4
Max.
-
-
2.5
±100
1
10
9.7
12
-
-
-
-
-
-
-
-
-
-
-
33.5
134
1.2
-
-
Unit Test Conditions
V
V/C
V
nA
μA
mΩ
S
VGS=0V, ID=250μA
Reference to 25C, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=30V, VGS=0V
VDS=24V, VGS=0V, Tj=55C
VGS=10V, ID=10A
VGS=4.5V, ID=7A
VDS=10V, ID=7A
nC VDS=24V, ID=8A, VGS=10V
ns VDS=15V, ID=1A, VGS=10V, RG=2.7Ω
pF VDS=25V, VGS=0V, f=1MHz
A
V IS=10A, VGS=0V
ns
nC
IF=8A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Pulse width limited by maximum junction temperature.
MTB5D0C03J4
CYStek Product Specification