MTB5D0C03J4 Datasheet, PDF (4/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Q1, N-CH Typical Characteristics
Spec. No. : C704J4
Issued Date : 2016.06.02
Revised Date : 2016.06.03
Page No. : 4/13
Typical Output Characteristics
50
4V
40
10V, 9V, 8V, 7V, 6V, 5V
30
3.5V
20
10
VGS=3V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
10
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
ID=10A
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=10A
RDS(ON)@Tj=25°C : 6.7mΩ typ.
2
1.6
1.2
0.8
VGS=4.5V, ID=7A,
0.4
RDS(ON)@Tj=25°C :8.3mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB5D0C03J4
CYStek Product Specification