MTB1K6N06KS6R Datasheet, PDF (7/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 7/ 10
Typical Characteristics, Schottky Barrier Diode (D1)
Forward Current vs Forward Voltage
1
125°C
75°C
0.1
25°C
0°C
0.01
0.001
0
-40°C
Tj=25℃, Pulse width=300μs,
1% Duty cycle
0.2
0.4
0.6
0.8
1
Forward Voltage---VF(V)
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Reverse Leakage Current vs Reverse Voltage
Tj=125°C
75℃
25℃
0°C
-40°C
10
20
30
40
Reverse Voltage---VR(V)
50
45
40
35
30
25
20
15
10
5
0
0.1
Total Capacitance vs Reverse Voltage
1
10
100
Reverse Voltage---VR(V)
MTB1K6N06S6R
CYStek Product Specification