MTB1K6N06KS6R Datasheet, PDF (6/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 6/ 10
Typical Characteristics(Cont.), NMOS (Q1)
Maximum Safe Operating Area
10
0.25
Maximum Drain Current vs JunctionTemperature
RDS(ON)
1
Limit
100μ s
1ms
0.1
TA=25°C, Tj=150°C,
0.01
VGS=10V, RθJA=625°C/W
Single Pulse
10ms
100ms
DC
0.001
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
0.2
0.15
0.1
0.05
TA=25°C, VGS=10V, RθJA=625°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Typical Transfer Characteristics
1.4
1.2
VDS=10V
1
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
ID, Drain Current(A)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Zθ JA(t)
4.Rθ JA=625°C/W
0.001
1.E-04
MTB1K6N06S6R
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification