MTB1K6N06KS6R Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 5/ 10
Typical Characteristics(Cont.), NMOS (Q1)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
30
ID=500mA
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=10V, ID=500mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
RDSON@Tj=25°C : 1.5Ω typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Capacitance vs Drain-to-Source Voltage
100
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
10
C _oss
1
0.1
Crss
1
10
100
VDS, Drain-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
TJ(MAX)=150°C
8
TA=25°C
RθJA=625°C/W
6
6
4
4
2
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
2
VDS=30V
ID=500mA
0
0
0.5
1
1.5
2
2.5
Qg, Total Gate Charge(nC)
MTB1K6N06S6R
CYStek Product Specification