MTB1K6N06KS6R Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Typical Characteristics, total device
Power Derating Curve
0.25
Mounted on FR-4 board
0.2
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 4/ 10
0.15
0.1
0.05
0
0 20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
Typical Characteristics, NMOS (Q1)
Typical Output Characteristics
1.4
10V, 9V, 8V, 7V, 6V
1.2
5V
1.0
0.8
0.6
0.4
0.2
0.0
0
4V
3.5V
3V
VGS=2.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
ID=250μA,
VGS=0V
1.2
1
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10
VGS=2.5V
Reverse Drain Current vs Source-Drain Voltage
1
Tj=25°C
0.8
VGS=3V
VGS=4.5V
1
0.001
MTB1K6N06S6R
VGS=10V
0.01
0.1
ID, Drain Current(A)
0.6
Tj=150°C
0.4
0.2
VGS=0V
0
1
0
0.2
0.4
0.6
0.8
1
IDR, Reverse Drain Current (A)
CYStek Product Specification