MTB1K6N06KS6R Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 3/ 10
Electrical Characteristics (Tj=25C, unless otherwise noted)
ESD protected N-Channel MOSFET (Q1) @ TA=25°C, unless otherwise specified
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
60
-
-
V
VGS=0V, ID=250μA
-
0.07
-
V/C Reference to 25C, ID=250μA
0.8
1.5
2.3
0.9
1.7
2.5
V
VDS=VGS, ID=250μA
VDS=VGS, ID=1mA
-
-
±10
VGS=±20V, VDS=0V
-
-
1
μA V_DS=60V, V_GS=0V
-
-
10
VDS=48V, VGS=0V (Tj=70C)
-
1.8
2.5
VGS=5V, ID=50mA
-
1.5
2

VGS=10V, ID=500mA
*GFS
-
300
-
mS VDS=10V, ID=200mA
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
-
29
50
-
4.3
25
pF VDS=25V, VGS=0, f=1MHz
-
2.9
5
-
2.8
-
-
-
16
7.6
-
-
ns
VDS=25V, ID=500mA, VGS=10V
RG=6Ω
-
14.4
-
-
2.0
-
-
0.9
-
nC VDS=30V, ID=500mA, VGS=10V
-
0.7
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
-
200
800
mA
0.87
1.2
V
VGS=0V, IS=300mA
12.3
-
5.6
-
ns
nC
IF=500mA, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Schottky Barrier Diode (D1) @ TA=25°C, unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
V(BR)R
40
-
-
V
Forward Voltage Drop
VFM
-
-
-
-
0.37
0.6
V
Peak Reverse Current
IRM
-
-
5
μA
Total Capacitance
CT
-
41
-
pF
Test Conditions
IR=10μA
IF=20mA
IF=200mA
VR=30V
VR=0V, f=1MHz
MTB1K6N06S6R
CYStek Product Specification