MTB1K6N06KS6R Datasheet, PDF (2/10 Pages) Cystech Electonics Corp. – 200mA Sychronous Rectifier featuring N-MOSFET and Schottky Diode

CYStech Electronics Corp.
Spec. No. : C974S6R
Issued Date : 2014.07.21
Revised Date :
Page No. : 2/ 10
Absolute Maximum Ratings, Total Device (Ta=25C, unless otherwise specified)
Characteristic
Power Dissipation (Note)
Power Derating Factor above 25°C
Output Current
Symbol
PD
Pder
IOUT
Value
200
1.6
200
Unit
mW
mW/°C
mA
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient to Air (Note)
Symbol
Tj ; Tstg
RÏ´JA
Note : Surface mounted on a FR-4 board with area of 1 in × 0.85 in × 0.062 in copper pad.
Value
-55 ~ +150
625
Unit
C
C/W
Sub-Component Device : ESD Protected N-Channel MOSFET (Q1)
(Ta=25C, unless otherwise specified)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS<1MΩ)
VDGR
60
V
Gate Source Voltage
VGSS
±20
V
Drain Current
Continuous(VGS=10V)
ID
Pulsed (tp≤10µs, Duty Cycle≤1%)
IDM
200
800
mA
Continuous Source Current
IS
200
mA
Sub-Component Device : Schottky Diode (D1)
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
40
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
28
V
Forward Continuous Current
IFM
350
mA
Non-Repetitive Peak Forward Surge Current @ t<1.0s
IFSM
1.5
A
MTB1K6N06S6R
CYStek Product Specification