MTD080P06J3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 6/ 9
Typical Characteristics (Cont.)
Forward Transfer Admittance vs Drain Current
100
Single Pulse Power Rating, Junction to Case
3000
2500
TJ(MAX)=150°C
10
TC=25°C
2000
RθJC=4°C/W
1
1500
VDS=-10V
1000
0.1
Pulsed
Ta=25°C
500
0.01
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
10 100
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=4°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD080P06J3
CYStek Product Specification