MTD080P06J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 4/ 9
Typical Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V
5V
4V
-VGS=3V
3.5V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
500
400
In descending order
300
VGS= -5V
-10V
200
100
0
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
ID=-10A
800
600
400
200
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2
VGS=-10V, ID=-10A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 82.5mΩ typ.
0.2
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD080P06J3
CYStek Product Specification