MTD080P06J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTD080P06J3
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V
-12.5A
84mΩ(typ)
113mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTD080P06J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTD080P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD080P06J3
CYStek Product Specification