MTD080P06J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 5/ 9
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
f=1MHz
Crss
10
0
10
20
30
-VDS, Drain-Source Voltage(V)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
10ms
100ms
1
1s
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
DC
single pulse
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
16
14
12
10
8
6
4
VGS=-10V, Tj(max)=150°C,
2
RθJC=4°C/W, single pulse
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
VDS=-48V
ID=-10A
0
0
3
6
9
12
15
Qg, Total Gate Charge(nC)
20
18
16
14
12
10
8
6
4
2
0
0
Typical Transfer Characteristics
VDS=-10V
12 34 56 78
-VGS, Gate-Source Voltage(V)
9 10
MTD080P06J3
CYStek Product Specification