MTD080P06J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current @L=0.1mH
Avalanche Energy @ L=1mH, ID=-10A, VDD=-50V
TC=25°C
Total Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VGS
ID
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
* 100% UIS testing in condition of VD=-15V, L=1mH, VG=-10V, IAS=-6A, Rated VDS=-60V
Limits
Unit
-60
±20
V
-12.5
-7.9
-3.5
A
-2.8
-45
-12.5
50
mJ
31
12
W
2.5
1.6
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
RθJC
RθJA
Typical
3.6
15
40
Maximum
4
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
MTD080P06J3
CYStek Product Specification