MTD080P06J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.05.09
Revised Date :
Page No. : 3/ 9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
-60
-
-
V
VGS=0V, ID=-250μA
-1.5
-
-3.5
VDS =VGS, ID=-250μA
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
-1
-25
μA
VDS =-48V, VGS =0V
VDS =-48V, VGS =0V, TJ=85°C
RDS(ON) *1
-
-
84
110
mΩ ^{VGS =-10V, ID=-10A}
113
150
VGS =-5V, ID=-8A
GFS *1
-
11.5
-
S VDS =-10V, ID=-10A
Dynamic
Qg *1, 2
-
11.9
17.9
Qgs *1, 2
-
2.5
-
nC ID=-10A, VDS=-48V, VGS=-10V
Qgd *1, 2
-
3.2
-
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
-
7.4
11
-
-
17.2
22.8
25.8
34.2
ns
VDS=-30V, ID=-10A, VGS=-10V,
RG=3Ω
tf *1, 2
-
7.4
11
Ciss
-
512
-
Coss
-
53
-
pF VGS=0V, VDS=-25V, f=1MHz
Crss
-
22
-
Rg
-
6.5
-
Ω f=1MHz
Source-Drain Diode Ratings and Characteristics
IS *1
ISM *1
-
-
-12.5
A
-
-
-45
VSD *1
-
-0.97
-1.2
V IS=-10A, VGS=0V
trr
Qrr
-
-
14
10.4
21
-
ns
nC
IF=-10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTD080P06J3
CYStek Product Specification