MTB9D0P03H8 Datasheet, PDF (6/11 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 6/11
Typical Characteristics(Cont.)
Typical Transfer Characteristics
200
180
VDS=-10V
160
140
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
-VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
250
TJ(MAX)=150°C
TA=25°C
200
RθJA=23°C/W
150
100
50
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
Maximum Drain Current vs Case Temperature
60
Maximum Safe Operating Area
1000
50
40
30
20
10
VGS=-10V, RθJC=2.5°C/W
0
25
600
50
75 100 125 150 175
TC, Case Temperature(°C)
Single Pulse Maximum Power Dissipation
RDSON
100 ^Limited
10
1
TC=25°C, VGS=-10V,Tj=150°C
RθJC=2.5°C/W, Single Pulse
0.1
0.1
1
10
-VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
DC
100
500
TJ(MAX)=150°C
TC=25°C
400
RθJC=2.5°C/W
300
200
100
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
MTB9D0P03H8
CYStek Product Specification