MTB9D0P03H8 Datasheet, PDF (3/11 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 3/11
Dynamic *4
Ciss
-
2177
-
Coss
-
235
-
pF
Crss
-
171
-
Qg *1, 2
-
49.6
-
Qgs *1, 2
-
7.3
-
nC
Qgd *1, 2
-
11.4
-
td(ON) *1, 2
-
14.6
-
tr *1, 2
-
22.6
-
ns
td(OFF) *1, 2
-
72.6
-
tf *1, 2
-
16.4
-
Rg
-
4
-
Ω
Source-Drain Diode
IS *1
-
-
-50
A
ISM *3
-
-
-200
VSD *1
-
-0.87
-1.2
V
trr
-
32.3
-
ns
Qrr
-
12.9
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
VDS=-25V, VGS=0V, f=1MHz
VDS=-15V, VGS=-10V, ID=-12A
VDS=-15V, ID=-12A, VGS=-10V
RG=1Ω
f=1MHz
IS=-20A, VGS=0V
IF=-1A, dIF/dt=100A/μs
MTB9D0P03H8
CYStek Product Specification