MTB9D0P03H8 Datasheet, PDF (4/11 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 4/11
Typical Characteristics
200
180
160
140
120
100
80
60
40
20
0
0
Typical Output Characteristics
-10V
-6V
-5V
-4.5V
-4V
-3.5V
VGS=-3V
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-4.5V
10
VGS=-10V
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
45
40
ID=-20A
35
30
25
20
15
10
5
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.0
VGS=-10V, ID=-20A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 7.3mΩ typ.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB9D0P03H8
CYStek Product Specification